Author/Authors :
Eremenko، نويسنده , , V. and Gonzلlez، نويسنده , , L. and Gonzلlez، نويسنده , , Y. and Vdovin، نويسنده , , V. and Vazquez، نويسنده , , L. and Aragَn، نويسنده , , G. and Herrera، نويسنده , , M. and Briones، نويسنده , , F.، نويسنده ,
Abstract :
An alternative way to characterise composition modulation in InxGa1−xP ALMBE layers grown on GaAs (001) substrate at a temperature of 420 °C by selective etching and photo etching is presented for the first time. AFM and TEM examinations revealed characteristic quasi-periodic surface structures consisting of ridges oriented along 〈110〉. We propose that morphology features observed in the experiments are related to composition modulation effects.
Keywords :
surface morphology , Etching , Transmission electron microscopy , atomic force microscopy
