Electrical properties of SiC: characterisation of bulk crystals and epilayers

Polytype related peculiarities of SiC, such as non-equivalent lattice sites for the incorporation of impurities, are briefly reviewed. With emphasis on the polytypes 4H and 6H, it is reported on the electrical characterisation techniques, which are applied, to as-grown bulk crystals and epilayers. Examples of capacitance–voltage (C–V) measurements for routine valuations of the material and deep-level transient spectroscopy (DLTS) investigations in combination with EPR for residual impurity analysis are given.