Electric and magnetic characterization of impurity-induced states in diluted magnetic Pb1−yYbyTe semiconductors

In the present paper we report on results obtained by complex investigations of galvanomagnetic and magnetic properties of a diluted magnetic semiconductor Pb1−yYbyTe. Ytterbium doping modifies the energy spectrum of charge carriers in lead telluride by formation of deep impurity levels, moving from valence to forbidden band with increase of ytterbium content. The paramagnetic Curie–Weiss response observed has revealed a small fraction of Yb ions in magnetically active Yb3+ charge state, while the majority of impurity ions are in non-magnetic Yb2+ state. We couple the magnetic and galvanomagnetic data in a model of charge carriers energy spectrum in Pb1−yYbyTe, for which energy position and electron population of the ytterbium level are derived as a function of impurity concentration.