Author/Authors :
Hoffmann، نويسنده , , A and Heitz، نويسنده , , R and Kaschner، نويسنده , , A and Lüttgert، نويسنده , , T and Born، نويسنده , , H and Egorov، نويسنده , , A.Y and Riechert، نويسنده , , H، نويسنده ,
Abstract :
The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 μm laser development is overviewed.
