Title of article
Localization effects in InGaAsN multi-quantum well structures
Author/Authors
Hoffmann، نويسنده , , A and Heitz، نويسنده , , R and Kaschner، نويسنده , , A and Lüttgert، نويسنده , , T and Born، نويسنده , , H and Egorov، نويسنده , , A.Y and Riechert، نويسنده , , H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
5
From page
55
To page
59
Abstract
The optical properties of InGaAsN/GaAs multiple quantum wells were investigated as a function of the nitrogen molar fraction. Time-integrated and time-resolved photoluminescence investigations demonstrate that localization effects at potential fluctuations play an important role in understanding the exciton dynamics. The results are supported by temperature-dependent photoluminescence and photoluminescence excitation investigations. In the last part, the state of the art of the 1.3 μm laser development is overviewed.
Keywords
InGaAsN , exciton dynamics , Photoluminescence
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138415
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