• Title of article

    Dislocation processes during the deformation of MoSi2 single crystals in a soft orientation

  • Author/Authors

    Guder، نويسنده , , S. and Bartsch، نويسنده , , M. and Yamaguchi، نويسنده , , M. and Messerschmidt، نويسنده , , U.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1999
  • Pages
    8
  • From page
    139
  • To page
    146
  • Abstract
    In situ straining experiments in a high-voltage electron microscope have been carried out for the first time on MoSi2 single crystals between 800 and 1000°C along a soft [201] orientation. Dislocations with 1/2〈111〉Burgers vectors were formed in localised sources leading to almost planar slip. The dislocations were strictly arranged along 60° and edge orientations and moved at high velocities or in a viscous way. These observations are correlated to the macroscopic deformation behaviour and interpreted by the formation of intrinsic point defect atmospheres around the moving dislocations. The model explains the ‘inverse’ dependence of the strain rate sensitivity of the flow stress on the strain rate.
  • Keywords
    strain rate sensitivity , MoSi2 , Flow stress anomaly , In situ straining experiments in a high-voltage electron microscope , Dislocation mobility
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Serial Year
    1999
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: A
  • Record number

    2138451