Growth of GaN on Si(100) substrates using BP as a buffer layer—selective epitaxial growth

A BP buffer layer was grown on Si(100) substrates by using halide vapor phase epitaxy (HVPE) technique, and a uniform and continuous BP layer was successfully grown monocrystalline on the window area. The roughness of the BP surface is much improved at the area grown over SiO2, which was confirmed by AFM observation. The growth of GaN was carried out by metal organic chemical vapor deposition (MOCVD) on normal BP/Si. It is found that the selective epitaxial growth is possible on Si(100) substrates using a SiO2 as a mask material. The results of selective growth and roughness will be discussed.