Author/Authors :
Rubio-Zuazo، نويسنده , , J and Jiménez-Riob، نويسنده , , R.J and Rodr??guez-Ca?as، نويسنده , , E and Prieto، نويسنده , , C and Palacios، نويسنده , , T and Calle، نويسنده , , F and Monroy، نويسنده , , E and S?nchez-Garc??a، نويسنده , , M.A، نويسنده ,
Abstract :
AlN-based compounds are studied as potential candidate to be used as substrate in surface acoustic wave (SAW) devices. In this paper, we present a study of the acoustic waves phase velocity behavior of a AlxGa1−xN thin film set prepared by molecular beam epitaxy on Si(111) (0≤x≤1 covering the full x-range). This study has been carried out by Brillouin spectroscopy and shows a nearly linear compositional dependence in the full range of concentrations. The maximum value the phase velocity for waves traveling along the film plane directions (11 200 m s−1) is reached for AlN.
Keywords :
Gallium nitride , Aluminum nitride , Thin films Brillouin scattering spectroscopy , SAW velocity
