Author/Authors :
S?nchez، نويسنده , , A.M and Pacheco، نويسنده , , F.J. and Molina، نويسنده , , S.I and Ruterana، نويسنده , , P and Calle، نويسنده , , F and Palacios، نويسنده , , T.A and S?nchez-Garc??a، نويسنده , , M.A and Calleja، نويسنده , , E and Garc??a، نويسنده , , R، نويسنده ,
Abstract :
The AlN buffer layer thickness influence on the inversion domains (IDs) in GaN/AlN/Si(111) grown by plasma assisted molecular beam epitaxy (MBE) is studied by transmission electron microscopy (TEM). The GaN layer polarity is determined by convergent beam electron diffraction (CBED). The AlN buffer layer thickness notably affects to the IDs density and the GaN epilayer polarity. Moreover the threading dislocation distribution existence also depends on such thickness.
Keywords :
Molecular beam epitaxy (MBE) , Transmission electron microscopy (TEM) , GaN , Inversion domains (IDs) , AlN buffer , Si (111) , Surface polarity
