Title of article :
Study of the linear electro-optic effect in α-GaN by electroreflectance
Author/Authors :
Shokhovets، نويسنده , , S and Goldhahn، نويسنده , , R and Gobsch، نويسنده , , G، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
4
From page :
215
To page :
218
Abstract :
The linear electro-optic (Pockels) effect for hexagonal GaN was studied by electrolytic electroreflectance spectroscopy. The electric field strength and space charge region parameters were extracted from Franz–Keldysh oscillations and photocurrent spectra. Data analysis yielded for the linear electro-optic coefficient r13 a value of (1.55±0.08) pm V−1 indicating an appreciable ionic contribution which can be related to the converse piezoelectric effect.
Keywords :
Electroreflectance , GaN , Electro-optic effect
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2002
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2138541
Link To Document :
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