Title of article
Effects of Ni implantation into bulk and epitaxial GaP on structural and magnetic characteristics
Author/Authors
Overberg، نويسنده , , M.E. and Theodoropoulou، نويسنده , , N. and Chu، نويسنده , , S.N.G. and Pearton، نويسنده , , S.J. and Abernathy، نويسنده , , C.R. and Hebard، نويسنده , , A.F. and Wilson، نويسنده , , R.G. and Zavada، نويسنده , , J.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
6
From page
14
To page
19
Abstract
Structural and magnetic characteristics of Ni-implanted GaP were measured for doses in the range 3–5×1016 cm−2. After subsequent annealing at 700 °C, transmission electron microscopy (TEM) showed residual lattice damage which was more significant in highly carbon-doped epi layers as compared to bulk GaP substrates. The magnetization measurements showed two different contributions, one present at ≤75 K and the other below ∼225 K. No secondary phase formation was detected in either type of GaP.
Keywords
Ni implantation , Charge carriers , Semiconductors
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138575
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