Title of article
Electronic properties and elastic constants of the ordered Ge1−xSnx alloys
Author/Authors
Bouarissa، نويسنده , , N. and Annane، نويسنده , , F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
7
From page
100
To page
106
Abstract
Based on the pseudopotential method within the virtual crystal approximation combined with the Harrison bond-orbital model, we have investigated the electronic properties and elastic constants of the ordered Ge1−xSnx alloys at low temperatures. Our results agree generally very well with available experimental data. We predict a transition from an indirect to direct gap at x≈0.09.
Keywords
Pseudopotential method , Harrison bond-orbital model , Alloys , electronic properties , elastic constants
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138722
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