Author/Authors :
Liu، نويسنده , , Xiangdong and Lu، نويسنده , , Qingming and Zhao، نويسنده , , Mingwen and Liu، نويسنده , , Pijun and Chen، نويسنده , , Feng and Xia، نويسنده , , Huihao and Li، نويسنده , , Feng Guo-Ying، نويسنده , , Minju and Huang، نويسنده , , Boda، نويسنده ,
Abstract :
Range distributions for bismuth ions implanted in AgGaS2 in an energy range of 80–300 keV were investigated by using 2.1 MeV He2+ Rutherford backscattering spectrometry (RBS). A convolution calculation method was used to extract the true distributions of bismuth from the measured RBS spectra. The range distribution parameters, Rp and ΔRp, were obtained and compared with that obtained from Monte Carlo simulation. The experimental Rp values agree with the Monte Carlo simulation values very well, but the experimental ΔRp values are systematically larger than those from the theoretical simulation.
