Title of article
An investigation of range distribution parameters for bismuth ion-implantation in silver gallium disulphur
Author/Authors
Liu، نويسنده , , Xiangdong and Lu، نويسنده , , Qingming and Zhao، نويسنده , , Mingwen and Liu، نويسنده , , Pijun and Chen، نويسنده , , Feng and Xia، نويسنده , , Huihao and Li، نويسنده , , Feng Guo-Ying، نويسنده , , Minju and Huang، نويسنده , , Boda، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
65
To page
68
Abstract
Range distributions for bismuth ions implanted in AgGaS2 in an energy range of 80–300 keV were investigated by using 2.1 MeV He2+ Rutherford backscattering spectrometry (RBS). A convolution calculation method was used to extract the true distributions of bismuth from the measured RBS spectra. The range distribution parameters, Rp and ΔRp, were obtained and compared with that obtained from Monte Carlo simulation. The experimental Rp values agree with the Monte Carlo simulation values very well, but the experimental ΔRp values are systematically larger than those from the theoretical simulation.
Keywords
AgGaS2 , Rutherford backscattering spectrometry , Range distribution
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2002
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2138850
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