• Title of article

    Passivation effects of silicon nanoclusters

  • Author/Authors

    Puzder، نويسنده , , Aaron and Williamson، نويسنده , , A.J and Grossman، نويسنده , , Jeffrey C and Galli، نويسنده , , Giulia، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2002
  • Pages
    6
  • From page
    80
  • To page
    85
  • Abstract
    We employ density functional and quantum Monte Carlo calculations to show that significant changes occur in the gap of fully hydrogenated nanoclusters when the surface contains impurity passivants such as atomic oxygen. Our results show that quantum confinement is only one mechanism responsible for visible photoluminescence (PL) in silicon nanoclusters and that the specific surface chemistry must be taken into account in order to interpret experimental results. In the case of oxygen, the gap reduction computed as a function of the nanocluster size provides a consistent interpretation of several recent experiments. Furthermore, we predict that other double bonded groups also significantly affect the optical gap, while single bonded groups have a minimal influence.
  • Keywords
    Impurity passivants , Photoluminescence , Silicon nanoclusters
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2002
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2138863