Texturing influence of process parameters in sol–gel Tb2O3 buffer layers on Ni tapes for YBCO coated conductors

In this study, texturing influence of process parameters in sol–gel Tb2O3 buffer layers on textured Ni tapes was evaluated. A solution deposition process was used to grow epitaxial Tb2O3 buffer layers on the Ni tapes for YBa2Cu3O7−x (YBCO) coated conductors. The Tb2O3 precursor solution was prepared using solvent, chelating agents and modifying chemical liquid materials. The solution was dip-coated onto the textured Ni substrates by a reel-to-reel sol–gel process. The amorphous thin films were dried at 300 °C for 30 s and then heat-treated at 500 °C for 2 min in air in the reel-to-reel sol–gel set up with a 3-zones furnace. The calcined films were annealed at temperature range of 750 and 1170 °C for 10–30 min under three different atmospheres. X-ray diffraction of the buffer layers indicated a strong c-axis orientation on the Ni tape substrate. The textured buffer layers were produced onto the textured Ni tapes at 1150 °C for 10 min under 4% H2–Ar gas flow thereby using modifying triethanol amin. Environment scanning electron microscopy images of the Tb2O3 buffer layer showed crack-free, pinhole-free, dense and smooth microstructure.