Preparation of silicon nanoaggregates by thermal activated reaction

The morphological aspects of phase transitions and dendritic growth have been thoroughly investigated in the past 20 years. In the context of silicon nanoaggregates elaboration, we study Al–SiO2 interface at temperatures under or above the eutectic point. We report the formation of diffusion-limited aggregates (DLA) or deposition-diffusion aggregates (DDA) of silicon. The aggregate elemental distribution is obtained using SEM equipped with X-ray analysis. Raman scattering confirms the presence of crystalline silicon. The broadening and the shift of the silicon line allow to estimate the size of the silicon nanocrystals and to conclude to nanometer size.