Title of article :
Precision placement of heteroepitaxial semiconductor quantum dots
Author/Authors :
Hull، نويسنده , , R. and Gray، نويسنده , , J.L. and Kammler، نويسنده , , M. and Vandervelde، نويسنده , , T. and Kobayashi، نويسنده , , T. and Kumar، نويسنده , , P. and Pernell، نويسنده , , T. and Bean، نويسنده , , J.C. and Floro، نويسنده , , J.A. and Ross، نويسنده , , F.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
8
From page :
1
To page :
8
Abstract :
We describe two new approaches to the patterning of Si(1 0 0) surfaces for controlled nucleation of heteroepitaxial Ge semiconductor clusters. In the first method, a Ga+-focused ion beam in situ to the growth chamber is used to create local regions of enhanced Ga+ concentration and surface topography. It is shown that at low ion doses (∼1014 cm−2), implanted Ga causes local nucleation of Ge clusters upon the implanted region. At higher doses (≥1015 cm−2), a complex surface topography localizes nucleation of Ge clusters. This approach can be used to seed complex patterns of Ge clusters with diameters of tens of nanometers and positional accuracy of sub-100 nm. The second method employs self-assembly of complex strain-stabilized “quantum quadruplet” and “quantum fortress” structures, whereby cooperative island nucleation around shallow strain-relieving pits is identified during GexSi1−x/Si(1 0 0) heteroepitaxy. These configurations are kinetically limited structures that exist over a range of compositions, growth temperatures, and growth rates, but which are destabilized by strain relaxation (e.g. by the introduction of misfit dislocations) and by growth conditions which provide high adatom surface mobilities. Both methods have broad potential application to nanoelectronic device architectures.
Keywords :
Strain relaxation , Quantum fortress , Controlled nucleation , Molecular Beam Epitaxy , Strained layer epitaxy
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2139132
Link To Document :
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