Author/Authors :
Dimitrakis، نويسنده , , P. and Kapetanakis، نويسنده , , E. and Normand، نويسنده , , P. and Skarlatos، نويسنده , , D. and Tsoukalas، نويسنده , , D. and Beltsios، نويسنده , , K. and Claverie، نويسنده , , A. and Benassayag، نويسنده , , G. and Bonafos، نويسنده , , C. and Chassaing، نويسنده , , D. and Carrada، نويسنده , , M. and Soncini، نويسنده , , V.، نويسنده ,
Abstract :
The electrical characteristics of thin silicon dioxide layers with embedded Si nanocrystals obtained by low-energy ion beam implantation and subsequent annealing have been investigated through capacitance and current–voltage measurements of MOS capacitors. The effects of the implantation energy (range: 0.65–2 keV), annealing temperature (950–1050 °C) and injection oxide characteristics on charge injection and storage are reported. It is shown that the implantation energy allows for a fine control of the memory window characteristics, and various device options are possible including memory operation with charge injection at low gate voltages.
Keywords :
Ion implantation , memory , SI , nanocrystals
