Obtaining of epitaxial films of metal silicides by ion implantation and molecular beam epitaxy

The CoSi2, NiSi2, NaSi2 and BaSi2 thin epitaxial films have been obtained by molecular beam epitaxy and ion implantation. The growth mechanisms as well as the composition, electron and crystalline structure of these films were studied and determinate. It was shown that NiSi2, CoSi2, BaSi2 and NaSi2 epitaxial films crystallise as cubic lattice, and the bond between atoms of metal and Si has ionic-covalent nature. It was determined that the metal silicide films are heterostructure relatively Si and their width band gap make up 0.5–0.7 eV.