Title of article :
Determination of the gap state density differences in hydrogenated amorphous silicon and Si/Ge
Author/Authors :
Liebe، نويسنده , , J. and Kattwinkel، نويسنده , , A. and Bنrner، نويسنده , , K. and Sun، نويسنده , , G. and Dong، نويسنده , , S. and Braunstein، نويسنده , , R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2000
Pages :
6
From page :
158
To page :
163
Abstract :
Time resolved photo- and thermoelectric effects (TTE) were used to simultaneously determine the thermal diffusivity, carrier lifetimes, carrier mobilities, trap levels and trap level densities in crystalline and amorphous Si (a-Si:H) and Si/Ge (a-Si/Ge:H) samples. In particular, gap density of state differences can be obtained from the decay of the ambipolar charge distribution, i.e. stage II of the TTE transients. This type of spectroscopy has been applied in particular to dark and light soaked a-Si:H samples and indeed large differences are observed.
Keywords :
Amorphous semiconductors , Heat diffusivity , Ambipolar charge
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2000
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2139241
Link To Document :
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