Volume and grain boundary diffusivity of boron in polycristalline silicon during rapid thermal annealing

The diffusion of boron and arsenic from polycristalline silicon into single crystal silicon during rapid thermal annealing (RTA) at temperature between 1000 and 1150 °C for 20 s has been investigated. Samples were characterised by secondary ion mass spectrometry (SIMS). The volume and intergranular diffusion coefficient has been deduced from the boron profiles. Depth profiles are analysed using the Suzuoka model. It is established that the grain boundary diffusivities are two to three times larger than the volume diffusivities.