Title of article
Annealing effect on the structural and optical properties of ZnO thin film on InP
Author/Authors
Shim، نويسنده , , Eun Sub and Kang، نويسنده , , Hong Seong and Pang، نويسنده , , Seong Sik and Kang، نويسنده , , Jeong Seok and Yun، نويسنده , , Ilgu and Lee، نويسنده , , Sang Yeol، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
366
To page
369
Abstract
II–VI semiconducting ZnO thin films have been fabricated by pulsed laser deposition (PLD) process on indium phosphide (InP) (100) substrates. Thin films were annealed at various temperatures in order to study the annealing temperature dependence of the structural and optical properties of ZnO thin film grown on InP substrate. The structural and optical properties were characterized with X-ray diffraction (XRD) and photoluminescence (PL), respectively. In our study, we have found some defect levels from the PL spectra and derived the defect centerʹs activation energy. According to XRD data, it could be thought that the films had some strains but relaxed by annealing processes.
Keywords
ZNO , InP , pulsed laser deposition , Photoluminescence , X-ray diffraction
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2139586
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