Deposition kinetic of airborne organic contamination on wafers measured by TD-GC/MS

In this work the quantification of sticking coefficients of several organic contaminants present in a representative IC manufacturing fab is studied. Thermo desorption-gas chromatography/mass spectrometry (TD-GC/MS) is used for both air and surface analysis, down to very low levels of contaminants: 0.01 ppbv and 1×1012 at. C cm−2, respectively. Two kinds of silicon surfaces is considered simultaneously (SiO2 and Si). They showed specific behaviour both in terms of adsorbed chemical species and deposited amounts.