Influence of Zn-doping on the resistivity of La2Ni1−xZnxO4+δ compound

The electrical resistivity of La2Ni1−xZnxO4+δ polycrystalline samples with x varying from 0.1 to 0.5% atom are investigated in relation with the formation and the correlation lengths of charge and spin ordered stripes. It appears almost impossible to explain the activated transport properties by conventional semi-conductor models where the holes are homogeneously distributed in the lattice. Present results rather suggest that the Zn-doping plays an important role on the charge transport and modifies the manner that the holes and spins are arranged in the system.