Title of article :
Optical absorption of nanometer-sized band-edge-modulated amorphous silicon–nitrogen films
Author/Authors :
Yamaguchi، نويسنده , , Masaaki and Ogihara، نويسنده , , Chisato and Morigaki، نويسنده , , Kazuo، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
6
From page :
135
To page :
140
Abstract :
Optical absorption of nanometer-sized band-edge-modulated (BM) amorphous silicon–nitrogen (a-Si1−xNx:H) films, BM films, are discussed using the effective medium expression and characterized in terms of the optical gap Eg, the value of the slope in Tauc plot B, the Urbach energy Eu and the refractive index n0 as functions of the modulation period L and their correlations between them. Eg in BM film increases with decreasing L without changing n0, i.e., average composition in the film. This results in the quantum-size effect. The values of B are hardly affected by L, while Eu increases with decreasing L. The increase in Eu is not expected from the effective medium expression and attributed to the effect caused by the sinusoidal modulation of the band-edge.
Keywords :
Amorphous silicon–nitrogen film , Nanostructured film , Band-edge-modulation effect , Quantum confinement effect
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2140105
Link To Document :
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