Title of article
Growth and characterization of PNZST thin films
Author/Authors
Zhai، نويسنده , , Jiwei and Li، نويسنده , , X. and Yao، نويسنده , , Y. and Chen، نويسنده , , Haydn، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
230
To page
233
Abstract
We have grown and compared microstructures and dielectric properties of PNZST thin films prepared on two different substrates by sol–gel methods. To ensure a complete single-phase perovskite PNZST thin film, a capping layer of PbO must be added to the top surface of the thin film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning and transmission electron microscopy. Dielectric and antiferroelectric properties were investigated as a function of temperature.
Keywords
microstructure , PNZST , Antiferroelectric thin film , Sol–gel technique , dielectric properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2140445
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