Title of article
Electric and photoelectric properties of semi-insulating crystals of CdTe:Pb
Author/Authors
Gorley، نويسنده , , Peter N. and Vorobiev، نويسنده , , Yuri V. and Makhniy، نويسنده , , Victor P. and Parfenyuk، نويسنده , , Orest and Ilashchuk، نويسنده , , Mariya and Gonzلlez-Hernلndez، نويسنده , , Jesْs and Horley، نويسنده , , Paul P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2003
Pages
4
From page
584
To page
587
Abstract
CdTe:Pb monocrystals were grown by the Bridgemann method. The impurity concentration in the melt was in the ranges of NPb0=1018–5×1019 cm−3. From the electric measurements it turns out that the lead creates deep levels with EV +0.43 eV in CdTe. At the mentioned concentrations, NPb0 the hole concentration is (6.11×109–1.98×1013) cm−3. From the photoelectric measurements it follows that recombination processes in CdTe:Pb could be explained by the presence of the defects with significantly different trapping cross-sections of electrons and holes (Spr≫Snr). The trapping asymmetry of the mentioned centers was defined to be Spr/Snr>106.
Keywords
Defects , Photorefraction , Photoelectric measurements , photoconductivity , Cadmium telluride
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2003
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2140834
Link To Document