Erbium doped PZT and multilayer structures for pyroelectric applications

Thin films of erbium doped Pb(Zr0.35Ti0.65)O3 (PEZT35) and Pb(Zr0.52Ti0.48)O3 (PEZT 52) as well as their multilayer heterostructures PEZT35/PEZT52 were processed on platinized Silicon substrates via solution deposition. The results of microstructure, ferroelectric, dielectric and pyroelectric properties are reported. It is shown that heterostructures can be successfully used to tune the dielectric and pyroelectric properties. The figure of merit for pyroelectric applications calculated for all films are found to be substantially lower than that of modified PZT ceramics because of the higher dielectric constants and loss tangents obtained. The voltage and current responses of the detector elements measured using a modulated laser source and a lock-in amplifier show better results for PEZT35 at low frequencies. A pyrovoltage output amplitude of up to 1 mV could be obtained on unpoled specimens, using platinum top electrodes.