Title of article :
Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal
Author/Authors :
Liu، نويسنده , , Xiangdong and Xia، نويسنده , , Yueyuan and Lu، نويسنده , , Qingming and Li، نويسنده , , Feng and Huang، نويسنده , , Boda، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2004
Abstract :
Electronic stopping powers for 80–350 keV 19F ions in AgGaS2 were obtained by range measurement. Depth profiles of 19F in AgGaS2 were measured by using the 19F(p,αγ)16O resonant nuclear reaction at ER=872.1 keV. A proper convolution calculation method was used to extract the true distribution of fluorine from the experimental excitation yield curves. The electronic stopping powers were derived through fitting the projected range distributions, simulated by using the TRIM/XLL code, to the experimentally measured range distributions. The electronic stopping cross sections were compared with those obtained from Monte Carlo simulation codes.
Keywords :
Electronic stopping power , AgGaS2 , Resonant nuclear reaction
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B