Preliminary studies of properties of oxide thin/thick films for gamma radiation dosimetry

Throughout this work tellurium dioxide (TeO2), indium oxide (In2O3), silicon monoxide (SiO), nickel oxide (NiO) and LaFeO3 perovskite and their mixtures in different proportions in the forms of thin and thick films were used as materials for the radiation sensing layers. Detection of radiation was performed based on the fact that both electrical and optical properties of the materials undergo changes upon the exposure to gamma radiation. It was found that the optical band gap values decreased with the increase in radiation dose. Influence of radiation resulted in significant alterations of current–voltage characteristics in both thin and thick film devices.