• Title of article

    Y2O3 thin films: internal stress and microstructure

  • Author/Authors

    Gaboriaud، نويسنده , , R.J and Paumier، نويسنده , , F and Pailloux، نويسنده , , F and Guerin، نويسنده , , P، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    5
  • From page
    34
  • To page
    38
  • Abstract
    Thin films of yttrium oxide, Y2O3, were deposited on Si (1 0 0), MgO and SrTiO3 substrates by ion beam sputtering. The as-deposited samples are under a strong compressive stress whatever the substrates are. Furthermore the in-plane (2 2 2) or (4 0 0) Bragg peaks are shifted and non-symmetric. The high-resolution transmission electron microscopy investigations on the epitaxially grown Y2O3 thin films lead to the conclusion that the ion beam deposition process promotes a strong disorder on the oxygen network. The crystallographic symmetry of the Y2O3 structure which is Th7 becomes a fluorite related symmetry which is Fm3m. Annealing treatments or deposition involving a secondary ion beam assisted deposition process re-orders the Fm3m structure which comes back to the equilibrium Th7 symmetry.
  • Keywords
    Yttrium Oxide , Thin films , microstructure , STRESS , Oxide gate
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2004
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2141309