ZT thin films produced by metal organic-chemical vapour deposition to be used as high-k dielectrics

In this work the synthesis and characterisation of ZrxTi1−xO2 (ZT) grown via a non conventional MOCVD apparatus on both silicon and platinum coated substrates are described. The samples have been chemically, morphologically and structurally characterised by AFM, XRD, SEM + FEG and XPS. Also high and low frequencies electrical characterisation has been performed to evaluate a possible application of such materials as high-k dielectrics.