Title of article
High transconductance nitride MOSHFETs
Author/Authors
Liu، نويسنده , , C.H. and Wang، نويسنده , , C.K and Chang، نويسنده , , S.J and Su، نويسنده , , Y.K، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
2
From page
32
To page
33
Abstract
AlGaN/GaN metal-oxide-semiconductor heterojunction field effect transistors (MOSHFETs) were fabricated with photo-chemical vapor deposited (photo-CVD) oxide as the insulating layer. It was found that room temperature saturation Ids, maximum gm and gate voltage swing (GVS) of the devices were 1220 mA/mm, 240 mS/mm and 4.5 V, respectively. It was also found that we could still achieve a maximum transconductance of 180 mS/mm at 300 °C.
Keywords
AlGaN/GaN , Photo-CVD , MOSHFET , SiO2
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141524
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