Growth of gallium oxide thin films on silicon by the metal organic chemical vapor deposition method

We have deposited gallium oxide (Ga2O3) films on Si(1 0 0) substrates by metal organic chemical vapor deposition (MOCVD), by a reaction of a trimethylgallium (TMGa) and oxygen (O2) mixture. The effect of temperature on growth and structure of films has been investigated at temperatures of 500–600 °C. We revealed that the films were amorphous with very small crystallites. The films were smooth but the surface roughness increased with increasing the growth temperature.