Title of article
Temperature evolution of photoluminescence from an In0.22Ga0.78Sb/GaSb single quantum well
Author/Authors
Kudrawiec، نويسنده , , R and Bryja، نويسنده , , L and Misiewicz، نويسنده , , J and Forchel، نويسنده , , A، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
4
From page
42
To page
45
Abstract
This article investigates photoluminescence (PL) spectra of an In0.22Ga0.78Sb/GaSb single quantum well (SQW) in 10–160 K temperature range. Emissions associated with free exciton and free carrier recombinations were observed. Line-shape analysis of PL spectra was performed by means of a statistical model which includes contributions of free exciton and free carrier recombinations. This model reproduces experimental PL data well and satisfactorily enables quantitative assessment of the relative contributions of the two types of transitions over the whole temperature range. The intensity ratio of the two transitions was interpreted on the basis of the law of mass action.
Keywords
Photoluminescence , Quantum well , Free excitons , Free carriers
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141530
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