Electrical properties of the n-ZnO/c-Si heterojunction prepared by chemical spray pyrolysis

Electrical, structural and compositional properties of n-ZnO/c-Si heterojunctions prepared by chemical spray pyrolysis on single-crystal n-type and p-type monocrystalline silicon(1 0 0) substrates are examined with the C–V method and admittance spectroscopy at temperature ranges between 223 and 373 K. The n-ZnO/c-Si heterojunctions show a height barrier consistent with the difference in energy of the work functions of Si and ZnO; however, the n-ZnO:Al/c-Si heterojunctions present a more complex behavior due to the defects at or near the n-ZnO:Al/c-Si interface, causing a Fermi energy pinning.