• Title of article

    Nonlinear I–V characteristics of doped SnO2

  • Author/Authors

    Dhage، نويسنده , , S.R. and Choube، نويسنده , , Vandana and Ravi، نويسنده , , V.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2004
  • Pages
    4
  • From page
    168
  • To page
    171
  • Abstract
    When tin oxide is doped with Sb2O3 and CoO, it shows highly nonlinear current (I)–voltage (V) characteristics. Addition of CoO leads to creation of oxygen vacancies and helps in sintering of SnO2. Antimony oxide acts as a donor and increases the conductivity. The results are nearly same when antimony oxide is replaced by tantalum oxide. The grain size of these sintered ceramics varies from 5 to 7 μm and the grain boundary barrier height (ΦB) is in the range of 0.5 eV. The observed nonlinear coefficient (α) is 25 and 27 for antimony and tantalum oxide, respectively and the breakdown field is in the range of 1250 V cm−1.
  • Keywords
    doping effects , ceramics , Electron microscopy , diffraction , electrical measurements , Schottky barrier
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    2004
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2141573