Ultra shallow and abrupt n+–p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices

Ultra shallow and abrupt n+–p junctions were formed on a silicon-on-insulator (SOI) using solid phase diffusion from arsenic-doped spin-on dopant source with various rapid thermal annealing (RTA) conditions. Their doping profiles and electrical characteristics were investigated and compared with those of junctions prepared from phosphorous-doped spin-on-dopant. Analysis of arsenic doped n+–p junctions prepared at the drive-in temperature of 950 °C revealed that the junction depth and junction abruptness are 27 nm and 8.5 nm/dec., respectively, which are superior to phosphorus-doped junctions. Moreover, the SOI n-type metal-oxide-semiconductor field effect transistor (MOSFET) with the gate length of 90 nm which source and drain extensions were doped from arsenic spin-on-dopant had good short channel properties.