Author/Authors :
Su، نويسنده , , Y.K and Yu، نويسنده , , H.C. and Chang، نويسنده , , S.J. and Lee، نويسنده , , C.T and Wang، نويسنده , , J.S and Kovsh، نويسنده , , A.R. and Wu، نويسنده , , Y.T. and Lin، نويسنده , , K.F and Huang، نويسنده , , C.Y، نويسنده ,
Abstract :
Resonant cavity light emitting diodes (RCLEDs) containing nine sheets of self-organized InAs quantum dot (QD) active layers and operating at around 1.3 μm are demonstrated. The structure was grown directly on GaAs substrates, which includes selectively oxidized AlOx current apertures and intracavity metal contacts. It was found that the average operating resistance is 60 Ω, while the average turn-on voltages is 1.6 V. It was also found that temperature coefficient of these RCLEDs was about 0.11 nm/°C.
Keywords :
QD , RCLED , Oxide confinement , InAs
