Electrical properties of PZT thin films grown by sol–gel and PLD using a seed layer

Lead Zirconate Titanate (PZT) thin films (with molar ratio of Zr:Ti::65/35) were deposited by pulsed laser deposition (PLD) and sol–gel technique on Pt/Si (1 1 1), and Pt/Si (1 0 0) substrates. A seed layer of PbTiO3 (0.1 μm) was coated by sol–gel on the substrates before depositing PZT by PLD and sol–gel. A metal/ferroelectric/metal (MFM) capacitor structure, formed by depositing gold electrode on top of the film, was used for C–V and P–E measurements. A large remnant polarization (Pr = 56.8 μC/cm2) was observed on Pt/Si (1 1 1) substrates for the films deposited by sol–gel. Comparison of properties of PZT film deposited by these two techniques is discussed.