Author/Authors :
Huang، نويسنده , , Hung-Wen and Kao، نويسنده , , C.C. and Chu، نويسنده , , J.T. and KUO، نويسنده , , H.C. and Wang، نويسنده , , S.C. and Yu، نويسنده , , C.C. and Lin، نويسنده , , C.F.، نويسنده ,
Abstract :
We report the electrical and optical characteristics of GaN light emitting diode (LED) with beryllium (Be) implanted Mg-doped GaN layer. The p-type layer of Be-implanted GaN LED showed a higher hole carrier concentration of 2.3 × 1018 cm−3 and low specific contact resistance value of 2.0 × 10−4 Ωcm2 than as-grown p-GaN LED samples without Be-implantation. The Be-implanted GaN LEDs with InGaN/GaN MQW show slightly lower light output (about 10%) than the as-grown GaN LEDs, caused by the high RTA temperature annealing process.
