Title of article
Space growth studies of Ce-doped Bi12SiO20 single crystal
Author/Authors
Zhou، نويسنده , , Y.F. and Wang، نويسنده , , J.C. and Tang، نويسنده , , L.A. and Pan، نويسنده , , Z.L. and Chen، نويسنده , , N.F and Chen، نويسنده , , W.C. and Huang، نويسنده , , Y.Y. and He، نويسنده , , W.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2004
Pages
5
From page
179
To page
183
Abstract
Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Ce concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one.
Keywords
Bismuth compounds , doping effects , Microgravity condition , Bridgman technique , Crystal growth
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2004
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2141949
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