Determination of Silicon self-interstitial diffusivity using isotopically pure 30Silicon multi-layer

Si self-diffusion under oxygen ambient has been studied using multi-layer structures consisting of alternative layers with isotopically enriched 30Si and natural Si in order to determine the diffusivities of Si self-interstitials. Spreading of 30Si spikes of each layer due to the diffusion of Si self-interstitials generated at the surface was measured with SIMS analysis. The diffusivity of Si self-interstitials, DI, is obtained from the fitting with experimental results. In the temperature range between 820 and 920 °C, DI and thermal equilibrium concentration of Si self-interstitials, CIi, are described by the Arrhenius equations, D I = 3.48 × 10 4   exp ( − 3.82   eV / K T ) (cm2/s) and C Ii = 9.62 × 10 18   exp ( − 0.475   eV / K T ) (cm−3), respectively.