Title of article :
Field electron emission from CdTe deposited tungsten tip: light-induced effects
Author/Authors :
Sharma، نويسنده , , R.B. and Singh، نويسنده , , R.A. and Dubey، نويسنده , , G.C. and Tondare، نويسنده , , V.N. and Pradeep، نويسنده , , N. and Joag، نويسنده , , D.S.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2003
Pages :
4
From page :
52
To page :
55
Abstract :
Cadmium telluride (CdTe) film has been deposited on tungsten field emitter tip by metal-organic chemical vapor deposition method. The deposited film on tungsten tip was characterized by scanning electron microscopy and energy dispersive X-ray analysis. In an all-glass field emission microscopy experiment, current–voltage characteristics were recorded after annealing the tip at ∼950 K for 30 s. Field emission current stability was recorded for 1, 3 and 5 μA current levels. While recording the stability, the field emitter was also exposed to the light (incandescent lamp, power ∼500 W) from a distance of ∼23 cm for 5 min. This resulted into enhancement in the current levels up to 40%. After switching off the lamp, current decreased to its originally set value with a finite decay time. The results are discussed in the light of existing literature and properties of CdTe and other solar energy materials.
Keywords :
Cadmium telluride , photoconductivity , Field emission
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
2003
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2142212
Link To Document :
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