Ferroelectric and piezoelectric properties of vanadium-doped CaBi4Ti4O15 ceramics

Vanadium-doped CaBi4Ti4O15 (CBTVx, x = 0−0.2) bismuth layered structure ferroelectric (BLSF) ceramics were prepared by the solid-state reaction method. X-ray diffraction pattern showed that single phase of BLSF with m = 4 formed when x ≤ 0.1. The sintering temperature of the CaBi4Ti4O15 ceramics was lowered by doping of vanadium. The effects of vanadium doping on the dielectric, ferroelectric and piezoelectric properties of CaBi4Ti4−xVx ceramics were investigated. V5+ dopant slightly increased the Curie temperature, enhanced the remnant polarization and decreased the coercive field of CBTVx ceramics. V5+ dopant decreased the temperature coefficient of dielectric constant and dielectric loss at high temperature. V5+-doped CaBi4Ti4O15 ceramics have superior piezoelectric properties. As a result, V5+-doped CBT ceramics are a promising candidate for high temperature piezoelectric applications.