Title of article :
Interface reactivity of Pr and SiO2 at 4H-SiC(0 0 0 1)
Author/Authors :
Schmeiكer، نويسنده , , D. and Lupina، نويسنده , , G. and Muessig، نويسنده , , H.J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2005
Abstract :
We use photoelectron spectroscopy to characterize the reactivity of Pr evaporated on SiO2 covered 4H-SiC substrates. We analyze the Si2p, C1s, and O1s core levels and find that Pr reacts at RT with the SiO2 layer to form Pr-silicate. In addition also Pr-silizide is formed as well as Pr-carbides. While the latter are formed as reaction intermediates after Pr evaporation, the Pr-silicate layer is formed upon annealing to 300 °C and is stable up to 800 °C.
Keywords :
High-k dielectric layer , Photoelectron spectroscopy , 4h-SiC , Interface reactivity
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
