Author/Authors :
Jones، نويسنده , , Anthony C. and Aspinall، نويسنده , , Helen C. and Chalker، نويسنده , , Paul R. and Potter، نويسنده , , Richard J. and Kukli، نويسنده , , Kaupo and Rahtu، نويسنده , , Antti and Ritala، نويسنده , , Mikko and Leskelن، نويسنده , , Markku، نويسنده ,
Abstract :
Lanthanide, or rare-earth oxides are currently being investigated as alternatives to SiO2 as the dielectric insulating layer in sub-0.1 μm CMOS technology. Metalorganic chemical vapour deposition (MOCVD) and atomic layer deposition (ALD) are promising techniques for the deposition of these high-κ dielectric oxides and in this paper some of our recent research into the MOCVD and ALD of PrOx, La2O3, Gd2O3, Nd2O3 and their related silicates are reviewed.
