Title of article
Fluorine-free and fluorine containing MOCVD precursors for electronic oxides: a comparison
Author/Authors
Bedoya، نويسنده , , C. and Condorelli، نويسنده , , G.G. and Di Mauro، نويسنده , , A. and Anastasi، نويسنده , , Roberta G. and Fragalà، نويسنده , , I.L. and Lisoni، نويسنده , , J.G. and Wouters، نويسنده , , D.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
6
From page
264
To page
269
Abstract
MOCVD processes adopting two different precursors Sr(tmhd)2pmdeta and Sr(hfac)2tetraglyme have been compared.
u FT-IR monitoring shows that Sr(hfac)2tetraglyme posses suitable thermal stability upon sublimation and good mass-transport properties. By contrast, Sr(tmhd)2pmdeta posses lower stability which precludes efficient sublimation/evaporation processes, thus requiring reactors equipped with liquid delivery systems for efficient MOCVD processes.
ts on the MOCVD process have been obtained combining in situ FT-IR and ex situ XRD, XPS, SEM and EDX techniques.
neous films have been deposited on Pt/TiN/SiO2/Si substrates in the 300–500 °C temperature range. XRD and XPS analyses have shown that fluorine or carbonate containing films are obtained adopting Sr(hfac)2tetraglyme or Sr(dpm)2pmdeta, respectively.
Keywords
?-diketonates , strontium , fluorine , MOCVD
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142599
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