Title of article
New developments on FRAMs: [3D] structures and all-perovskite FETs
Author/Authors
Scott، نويسنده , , J.F.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2005
Pages
7
From page
6
To page
12
Abstract
A discussion is presented of new directions in ferroelectric random access memories (FRAMs) and ferroelectric capacitors for dynamic random access memories (DRAMs), emphasizing [3D] structures and new materials, as well as ferroelectric gates and new mechanisms of domain wall motion in nano-scale geometries.
Keywords
electronic ceramics , Ferroelectrics
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
2005
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2142661
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