Electro-optic properties of c-axis oriented LiNbO3 films grown on Si(1 0 0) substrate

We developed a spectroscopic–ellipsometric approach to evaluate the electro-optic coefficient of highly c-axis oriented LiNbO3 films on an Si(1 0 0) substrate grown by electron cyclotron resonance plasma sputtering. Applying an electric field between the TiN transparent top electrode and Si substrate, the interference fringe appearing in the tan Ψ spectrum was slightly modulated by phase retardation in the wavelength domain. The change in effective wavelength was converted to refractive index change, yielding dispersion in the Pockels coefficient (r33) between 0.3 and 0.8 μm. At 633 nm, we obtained an r33 that was 57% of the bulk LN crystal value.