High-temperature high-humidity and electrical static discharge stress effects on GaN p–i–n UV sensor

We report the operation tests of GaN p–i–n photodetectors under the conditions of high-temperature (HT), high-temperature high-humidity (HTHH), and electrical static discharge (ESD). It is found that the ESD stress plays the dominant role for the degradation of dark current and the responsivity or rejection ratio of GaN p–i–n photodetectors. The GaN p–i–n diodes exhibited similar photoelectrical characteristics after HT or HTHH test but failed after ESD breakdown test at reverse bias of 4500 V. The surface morphologies are not affected even after ESD and HTHH tests.